Nanoindentation of GaSe thin films

Sheng Rui Jian*, Shin An Ku, Chih-Wei Luo, Jenh-Yih Juang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The structural and nanomechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates by pulsed laser deposition. XRD patterns reveal only the pure (000 l)-oriented reflections originating from the hexagonal GaSe phase and no trace of any impurity or additional phases. Nanoindentation results exhibit discontinuities (so-called multiple 'pop-in' events) in the loading segments of the load-displacement curves, and the continuous stiffness measurements indicate that the hardness and Young's modulus of the hexagonal GaSe films are 1.8 ± 0.2 and 65.8 ± 5.6 GPa, respectively.

Original languageEnglish
Article number403
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume7
DOIs
StatePublished - 17 Sep 2012

Keywords

  • GaSe thin films
  • Hardness
  • Nanoindentation
  • XRD

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