Nanogap formation by palladium hydrogenation for surface conduction electron emitters fabrication

Chih Hao Tsai*, Fu-Ming Pan, Kuan Jung Chen, Cheng Yang Wei, Mei Liu, Chi Neng Mo

*Corresponding author for this work

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

Nanometer-scale gaps in Pd strips are obtained by hydrogen absorption under high pressure treatment. The resulting lattice constant increase due to the Pd phase transformation after hydrogen uptake results in a large compressive stress on the thin Pd films. Under proper geometric arrangement of the Pd electrode within a surface conduction electron (SCE) emitter structure, a single nanogap per SCE device is obtained. A turn-on voltage of 41 V is observed for emitters with a 25 nm gap.

Original languageEnglish
Article number163115
JournalApplied Physics Letters
Volume90
Issue number16
DOIs
StatePublished - 30 Apr 2007

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