Nanocrystallization and interfacial tension of sol-gel derived memory

Chi Chang Wu*, Yi Jen Tsai, Min Ching Chu, Shao Ming Yang, Fu-Hsiang Ko, Pin Lin Liu, Wen Luh Yang, Hsin Chiang You

*Corresponding author for this work

Research output: Contribution to journalArticle

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The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 °C annealing, and finally transferred into NCs at 900 °C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 °C annealing was varied and had higher interfacial energy. The crystallized process at 900 °C annealing could minimize the energy. The retention for 900 °C annealed sample exhibited less than 30% charge loss after 106 s at 125 °C measurement.

Original languageEnglish
Article number123111
JournalApplied Physics Letters
Issue number12
StatePublished - 3 Apr 2008

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    Wu, C. C., Tsai, Y. J., Chu, M. C., Yang, S. M., Ko, F-H., Liu, P. L., Yang, W. L., & You, H. C. (2008). Nanocrystallization and interfacial tension of sol-gel derived memory. Applied Physics Letters, 92(12), [123111].