Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities

Yen Fu Lin*, Chia Hung Chang, Tsu Chang Hung, Wen-Bin Jian*, Kazuhito Tsukagoshi, Yue Han Wu, Li Chang, Zhaoping Liu, Jiye Fang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.

Original languageEnglish
Article number13035
Pages (from-to)1-12
Number of pages12
JournalScientific reports
StatePublished - 11 Aug 2015

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