Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

Yi Hsun Tsai, Yu Hsun Wu, Yen Yu Ting, Chu Chun Wu, Jenq Shinn Wu, Sheng Di Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.

Original languageEnglish
Article number105001
JournalAIP Advances
Volume9
Issue number10
DOIs
StatePublished - 1 Oct 2019

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