Nano-structure enhanced organic light emitting diodes made with CdSe(ZnS) quantum dots and a semiconducting polymer

Chih W. Lee; Chain-Shu Hsu

doi:10.1109/NANO.2005.1500837

Nano-structure enhanced organic light emitting diodes made with CdSe(ZnS) quantum dots and a semiconducting polymer

Chih W. Lee^*, Chain-Shu Hsu

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this study, we report experimental results on the bilayer light emitting diodes made with organic capped cdse(zns) core/ shell type semiconductor nanocrystals and an electroluminescent semiconducting polymer, poly[2-phenyl-3-(9,9-dihexyl-fluoren-2-yl)phenylene vinylene]-co[5-methoxy-2- ((2′-ethylhexyl)oxy)phenylenevin ylene]. The device with the configuration ITO/PEDOT/CdSe(ZnS) and polymer blend/Ca/Al was fabricated. The pure polymer device emits yellow light with maximum brightness of 3949 cd/m² and maximum external quantum efficiency of 0.27 cd/a at 10 v. after blending with the cdse(zns) quantum dots, the pled device shows much high brightness and external quantum efficiency and lower driving voltage. The maximum brightness is as high as 8192 cd/m² with maximum external quantum efficiency of 1.27 cd/a at 7 v.

Original language	English
Title of host publication	2005 5th IEEE Conference on Nanotechnology
Pages	793-795
Number of pages	3
DOIs	https://doi.org/10.1109/NANO.2005.1500837
State	Published - 1 Dec 2005
Event	2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan Duration: 11 Jul 2005 → 15 Jul 2005

Publication series

Name	2005 5th IEEE Conference on Nanotechnology
Volume	2

Conference

Conference	2005 5th IEEE Conference on Nanotechnology
Country	Japan
City	Nagoya
Period	11/07/05 → 15/07/05

Keywords

Nano-electronic device
Polymer light emitting dioes
Quantum dots

Access to Document

10.1109/NANO.2005.1500837

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Cite this

@inproceedings{4e21948dda0c4ceda8d93594825285ed,

title = "Nano-structure enhanced organic light emitting diodes made with CdSe(ZnS) quantum dots and a semiconducting polymer",

abstract = "In this study, we report experimental results on the bilayer light emitting diodes made with organic capped cdse(zns) core/ shell type semiconductor nanocrystals and an electroluminescent semiconducting polymer, poly[2-phenyl-3-(9,9-dihexyl-fluoren-2-yl)phenylene vinylene]-co[5-methoxy-2- ((2′-ethylhexyl)oxy)phenylenevin ylene]. The device with the configuration ITO/PEDOT/CdSe(ZnS) and polymer blend/Ca/Al was fabricated. The pure polymer device emits yellow light with maximum brightness of 3949 cd/m2 and maximum external quantum efficiency of 0.27 cd/a at 10 v. after blending with the cdse(zns) quantum dots, the pled device shows much high brightness and external quantum efficiency and lower driving voltage. The maximum brightness is as high as 8192 cd/m2 with maximum external quantum efficiency of 1.27 cd/a at 7 v.",

keywords = "Nano-electronic device, Polymer light emitting dioes, Quantum dots",

author = "Lee, {Chih W.} and Chain-Shu Hsu",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/NANO.2005.1500837",

language = "English",

isbn = "0780391993",

series = "2005 5th IEEE Conference on Nanotechnology",

pages = "793--795",

booktitle = "2005 5th IEEE Conference on Nanotechnology",

note = "null ; Conference date: 11-07-2005 Through 15-07-2005",

}

Lee, CW & Hsu, C-S 2005, Nano-structure enhanced organic light emitting diodes made with CdSe(ZnS) quantum dots and a semiconducting polymer. in 2005 5th IEEE Conference on Nanotechnology., 1500837, 2005 5th IEEE Conference on Nanotechnology, vol. 2, pp. 793-795, 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 11/07/05. https://doi.org/10.1109/NANO.2005.1500837

Nano-structure enhanced organic light emitting diodes made with CdSe(ZnS) quantum dots and a semiconducting polymer. / Lee, Chih W.; Hsu, Chain-Shu.

2005 5th IEEE Conference on Nanotechnology. 2005. p. 793-795 1500837 (2005 5th IEEE Conference on Nanotechnology; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nano-structure enhanced organic light emitting diodes made with CdSe(ZnS) quantum dots and a semiconducting polymer

AU - Lee, Chih W.

AU - Hsu, Chain-Shu

PY - 2005/12/1

Y1 - 2005/12/1

N2 - In this study, we report experimental results on the bilayer light emitting diodes made with organic capped cdse(zns) core/ shell type semiconductor nanocrystals and an electroluminescent semiconducting polymer, poly[2-phenyl-3-(9,9-dihexyl-fluoren-2-yl)phenylene vinylene]-co[5-methoxy-2- ((2′-ethylhexyl)oxy)phenylenevin ylene]. The device with the configuration ITO/PEDOT/CdSe(ZnS) and polymer blend/Ca/Al was fabricated. The pure polymer device emits yellow light with maximum brightness of 3949 cd/m2 and maximum external quantum efficiency of 0.27 cd/a at 10 v. after blending with the cdse(zns) quantum dots, the pled device shows much high brightness and external quantum efficiency and lower driving voltage. The maximum brightness is as high as 8192 cd/m2 with maximum external quantum efficiency of 1.27 cd/a at 7 v.

AB - In this study, we report experimental results on the bilayer light emitting diodes made with organic capped cdse(zns) core/ shell type semiconductor nanocrystals and an electroluminescent semiconducting polymer, poly[2-phenyl-3-(9,9-dihexyl-fluoren-2-yl)phenylene vinylene]-co[5-methoxy-2- ((2′-ethylhexyl)oxy)phenylenevin ylene]. The device with the configuration ITO/PEDOT/CdSe(ZnS) and polymer blend/Ca/Al was fabricated. The pure polymer device emits yellow light with maximum brightness of 3949 cd/m2 and maximum external quantum efficiency of 0.27 cd/a at 10 v. after blending with the cdse(zns) quantum dots, the pled device shows much high brightness and external quantum efficiency and lower driving voltage. The maximum brightness is as high as 8192 cd/m2 with maximum external quantum efficiency of 1.27 cd/a at 7 v.

KW - Nano-electronic device

KW - Polymer light emitting dioes

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=33746917185&partnerID=8YFLogxK

U2 - 10.1109/NANO.2005.1500837

DO - 10.1109/NANO.2005.1500837

M3 - Conference contribution

AN - SCOPUS:33746917185

SN - 0780391993

SN - 9780780391994

T3 - 2005 5th IEEE Conference on Nanotechnology

SP - 793

EP - 795

BT - 2005 5th IEEE Conference on Nanotechnology

Y2 - 11 July 2005 through 15 July 2005

ER -