Nano-scale oxide layer prepared by plasma oxidation on single-crystalline aluminum film

Peng Yu Chen*, Chu Chun Wu, Yan Ting Fan, Sheng-Di Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The plasma oxidation on single crystalline Al thin film grown by molecular beam epitaxy is presented. The dependence of oxidation rates on the N 2 O flux, the substrate temperature, the RF power, and the chamber pressure is studied with auger electron spectroscopy and transmission electron microscope. Our work provides a simple way to prepare a smooth nano-scale Al 2 O 3 film on aluminum, which is a key step to fabricate ultraviolet plasmonic nanolasers.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages809-811
Number of pages3
ISBN (Electronic)9781509039142
DOIs
StatePublished - 21 Nov 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 22 Aug 201625 Aug 2016

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period22/08/1625/08/16

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