Nano-scale implantless Schottky-barrier SOI FinFETs with excellent ambipolar performance

Horng-Chih Lin, Meng Fan Wang, Fu Ju Hou, Jan Tsai Liu, Fu-Hsiang Ko, Hsuen Li Chen, Guo Wei Huang, Tiao Yuan Huang, S. M. Sze

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

A novel nano-scale SOI device featuring silicide Schottky source/drain and field-induced S/D extensions is proposed and demonstrated. Excellent p- and n-channel performance with nearly ideal subthreshold swing (∼ 60 mV/dec.) and high on-/off-state current ratio (>10 9 and >10 8 for n- and p-channel modes, respectively) is realized, for the first time, on a single device. These encouraging results suggest that the new device may represent a potential alternative to post-CMOS device applications.

Original languageEnglish
Title of host publication60th Device Research Conference, DRC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages45-46
Number of pages2
ISBN (Electronic)0780373170
DOIs
StatePublished - 1 Jan 2002
Event60th Device Research Conference, DRC 2002 - Santa Barbara, United States
Duration: 24 Jun 200226 Jun 2002

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2002-January
ISSN (Print)1548-3770

Conference

Conference60th Device Research Conference, DRC 2002
CountryUnited States
CitySanta Barbara
Period24/06/0226/06/02

Keywords

  • Doping
  • Etching
  • Fabrication
  • FinFETs
  • Fluctuations
  • Lithography
  • Nanoscale devices
  • Oxidation
  • Silicides
  • Voltage

Fingerprint Dive into the research topics of 'Nano-scale implantless Schottky-barrier SOI FinFETs with excellent ambipolar performance'. Together they form a unique fingerprint.

Cite this