Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

Y. J. Lee*, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.

Original languageEnglish
Pages (from-to)157-160
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume138
Issue number2
DOIs
StatePublished - 25 Mar 2007

Keywords

  • AlGaInP-based LEDs
  • Chemical wet etching
  • Nano-roughening

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