Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance

C. H. Cheng; Albert Chin

doi:10.1007/s00339-013-7547-0

Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance

C. H. Cheng^*, Albert Chin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report a novel resistive random access memory using tri-layer dielectrics of GeO _x /nano-crystal TiO₂/TaON and low cost top Ni and bottom TaN electrodes. Excellent device performance of ultra-low 720 fJ switching energy, tight distributions of set/reset currents, and exceptionally long endurance of 5×10⁹ cycles were achieved simultaneously. Such excellent endurance may create new applications such as those used for Data Centers that are ascribed to the higher-κ nano-crystal TiO₂, hopping pass via grain boundaries, and fast switching speed of 100 ns to improve the dielectric fatigue during endurance stress.

Original language	English
Pages (from-to)	203-207
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	111
Issue number	1
DOIs	https://doi.org/10.1007/s00339-013-7547-0
State	Published - 1 Apr 2013

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abstract = "We report a novel resistive random access memory using tri-layer dielectrics of GeO x /nano-crystal TiO2/TaON and low cost top Ni and bottom TaN electrodes. Excellent device performance of ultra-low 720 fJ switching energy, tight distributions of set/reset currents, and exceptionally long endurance of 5×109 cycles were achieved simultaneously. Such excellent endurance may create new applications such as those used for Data Centers that are ascribed to the higher-κ nano-crystal TiO2, hopping pass via grain boundaries, and fast switching speed of 100 ns to improve the dielectric fatigue during endurance stress.",

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