Nano-CMOS technology for next fifteen years

Hiroshi Iwai*, Hei Wong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Complementary Metal-Oxide-Semiconductor (CMOS) technology has been developed into the sub-100 nm range. It is expected that the nano-CMOS technology will govern the IC manufacturing for at least another couple of decades. Though there are many challenges ahead, further down-sizing the device to a few nanometers is still on the schedule of International Technology Roadmap for Semiconductors (ITRS). Several technological options for manufacturing nano-CMOS microchips are available or will soon be available. This paper reviews the challenges of nano-CMOS downsizing and manufacturing. We shall focus on the recent progresses on the key technologies for the nano-CMOS IC fabrication in the next fifteen years.

Original languageEnglish
Title of host publication2006 IEEE Region 10 Conference, TENCON 2006
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)1424405491, 9781424405497
DOIs
StatePublished - 2006
Event2006 IEEE Region 10 Conference, TENCON 2006 - Hong Kong, China
Duration: 14 Nov 200617 Nov 2006

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450

Conference

Conference2006 IEEE Region 10 Conference, TENCON 2006
CountryChina
CityHong Kong
Period14/11/0617/11/06

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