@inproceedings{767bffb49a1c483c8d0b19550ccc1b4a,
title = "N 2 O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors",
abstract = " The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). This phenomenon depends on the defects of a-IGZO active layer of the device, which is treated by N 2 O plasma. This phenomenon only appears in the as-fabricated device, but not in the device with N 2 O plasma treatment, which is experimentally verified. N 2 O plasma treatment enhances the thin film bonding strength which could suppress the formation of temperature-dependent hole. The hole can be generated from oxygen atoms above 400K by leaving their original sites. The N 2 O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N 2 O plasma treatment is much lower than that as-fabricated. The N 2 O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.",
author = "Jhu, {Jhe Ciou} and Chang, {Ting Chang} and Chang, {Geng Wei} and Tsai, {Tsung Ming} and Syu, {Yong En} and Jian, {Fu Yen} and Chang, {Kuan Chang} and Ya-Hsiang Tai",
year = "2013",
month = jan,
day = "1",
doi = "10.1149/04531.0047ecst",
language = "English",
isbn = "9781623320546",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "31",
pages = "47--55",
booktitle = "Thermal and Plasma CVD of Nanostructures and Their Applications",
edition = "31",
note = "null ; Conference date: 06-05-2012 Through 10-05-2012",
}