N 2 O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors

Jhe Ciou Jhu; Ting Chang Chang; Geng Wei Chang; Tsung Ming Tsai; Yong En Syu; Fu Yen Jian; Kuan Chang Chang; Ya-Hsiang Tai

doi:10.1149/04531.0047ecst

N ₂ O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors

Jhe Ciou Jhu, Ting Chang Chang, Geng Wei Chang, Tsung Ming Tsai, Yong En Syu, Fu Yen Jian, Kuan Chang Chang, Ya-Hsiang Tai

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). This phenomenon depends on the defects of a-IGZO active layer of the device, which is treated by N ₂ O plasma. This phenomenon only appears in the as-fabricated device, but not in the device with N ₂ O plasma treatment, which is experimentally verified. N ₂ O plasma treatment enhances the thin film bonding strength which could suppress the formation of temperature-dependent hole. The hole can be generated from oxygen atoms above 400K by leaving their original sites. The N ₂ O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N ₂ O plasma treatment is much lower than that as-fabricated. The N ₂ O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

Original language	English
Title of host publication	Thermal and Plasma CVD of Nanostructures and Their Applications
Publisher	Electrochemical Society Inc.
Pages	47-55
Number of pages	9
Edition	31
ISBN (Print)	9781623320546
DOIs	https://doi.org/10.1149/04531.0047ecst
State	Published - 1 Jan 2013
Event	Symposium on Thermal and Plasma CVD of Nanostructures and Their Applications - 221st ECS Meeting - Seattle, WA, United States Duration: 6 May 2012 → 10 May 2012

Publication series

Name	ECS Transactions
Number	31
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Thermal and Plasma CVD of Nanostructures and Their Applications - 221st ECS Meeting
Country	United States
City	Seattle, WA
Period	6/05/12 → 10/05/12

Access to Document

10.1149/04531.0047ecst

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Jhu, J. C., Chang, T. C., Chang, G. W., Tsai, T. M., Syu, Y. E., Jian, F. Y., Chang, K. C., & Tai, Y-H. (2013). N ₂ O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors. In Thermal and Plasma CVD of Nanostructures and Their Applications (31 ed., pp. 47-55). (ECS Transactions; Vol. 45, No. 31). Electrochemical Society Inc.. https://doi.org/10.1149/04531.0047ecst

Jhu, Jhe Ciou ; Chang, Ting Chang ; Chang, Geng Wei ; Tsai, Tsung Ming ; Syu, Yong En ; Jian, Fu Yen ; Chang, Kuan Chang ; Tai, Ya-Hsiang. / N ₂ O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors. Thermal and Plasma CVD of Nanostructures and Their Applications. 31. ed. Electrochemical Society Inc., 2013. pp. 47-55 (ECS Transactions; 31).

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title = "N 2 O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors",

abstract = " The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). This phenomenon depends on the defects of a-IGZO active layer of the device, which is treated by N 2 O plasma. This phenomenon only appears in the as-fabricated device, but not in the device with N 2 O plasma treatment, which is experimentally verified. N 2 O plasma treatment enhances the thin film bonding strength which could suppress the formation of temperature-dependent hole. The hole can be generated from oxygen atoms above 400K by leaving their original sites. The N 2 O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N 2 O plasma treatment is much lower than that as-fabricated. The N 2 O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.",

author = "Jhu, {Jhe Ciou} and Chang, {Ting Chang} and Chang, {Geng Wei} and Tsai, {Tsung Ming} and Syu, {Yong En} and Jian, {Fu Yen} and Chang, {Kuan Chang} and Ya-Hsiang Tai",

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doi = "10.1149/04531.0047ecst",

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series = "ECS Transactions",

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Jhu, JC, Chang, TC, Chang, GW, Tsai, TM, Syu, YE, Jian, FY, Chang, KC & Tai, Y-H 2013, N ₂ O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors. in Thermal and Plasma CVD of Nanostructures and Their Applications. 31 edn, ECS Transactions, no. 31, vol. 45, Electrochemical Society Inc., pp. 47-55, Symposium on Thermal and Plasma CVD of Nanostructures and Their Applications - 221st ECS Meeting, Seattle, WA, United States, 6/05/12. https://doi.org/10.1149/04531.0047ecst

N ₂ O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors. / Jhu, Jhe Ciou; Chang, Ting Chang; Chang, Geng Wei; Tsai, Tsung Ming; Syu, Yong En; Jian, Fu Yen; Chang, Kuan Chang; Tai, Ya-Hsiang.

Thermal and Plasma CVD of Nanostructures and Their Applications. 31. ed. Electrochemical Society Inc., 2013. p. 47-55 (ECS Transactions; Vol. 45, No. 31).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - N 2 O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors

AU - Jhu, Jhe Ciou

AU - Chang, Ting Chang

AU - Chang, Geng Wei

AU - Tsai, Tsung Ming

AU - Syu, Yong En

AU - Jian, Fu Yen

AU - Chang, Kuan Chang

AU - Tai, Ya-Hsiang

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). This phenomenon depends on the defects of a-IGZO active layer of the device, which is treated by N 2 O plasma. This phenomenon only appears in the as-fabricated device, but not in the device with N 2 O plasma treatment, which is experimentally verified. N 2 O plasma treatment enhances the thin film bonding strength which could suppress the formation of temperature-dependent hole. The hole can be generated from oxygen atoms above 400K by leaving their original sites. The N 2 O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N 2 O plasma treatment is much lower than that as-fabricated. The N 2 O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

AB - The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). This phenomenon depends on the defects of a-IGZO active layer of the device, which is treated by N 2 O plasma. This phenomenon only appears in the as-fabricated device, but not in the device with N 2 O plasma treatment, which is experimentally verified. N 2 O plasma treatment enhances the thin film bonding strength which could suppress the formation of temperature-dependent hole. The hole can be generated from oxygen atoms above 400K by leaving their original sites. The N 2 O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N 2 O plasma treatment is much lower than that as-fabricated. The N 2 O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

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U2 - 10.1149/04531.0047ecst

DO - 10.1149/04531.0047ecst

M3 - Conference contribution

AN - SCOPUS:84885791879

SN - 9781623320546

T3 - ECS Transactions

SP - 47

EP - 55

BT - Thermal and Plasma CVD of Nanostructures and Their Applications

PB - Electrochemical Society Inc.

Y2 - 6 May 2012 through 10 May 2012

ER -

Jhu JC, Chang TC, Chang GW, Tsai TM, Syu YE, Jian FY et al. N ₂ O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors. In Thermal and Plasma CVD of Nanostructures and Their Applications. 31 ed. Electrochemical Society Inc. 2013. p. 47-55. (ECS Transactions; 31). https://doi.org/10.1149/04531.0047ecst