@inproceedings{9cfa567ee70b4ab89830519acd860559,
title = "N 2 O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors",
abstract = " Abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon's dependence on the defects of a-IGZO active layer, this paper examines a device fabricated with N 2 O plasma treatment at a-IGZO film. This phenomenon only appears in the as-fabricated device, but not in the device with N 2 O plasma treatment, which is experimentally verified. N 2 O plasma treatment of a-IGZO TFTs enhance the thin film bonding strength, which could suppress the formation of temperature-dependent point defects. The point defects could be generated from oxygen atoms leaving their original sites above 400K. The N 2 O plasma treatment devices have better stability performance than as-fabricated devices. The results suggested that the density of point states for a-IGZO TFTs with N 2 O plasma treatment is much lower than that as-fabricated. The N 2 O plasma repairs the point defect to suppress temperature-dependent sub-threshold leakage current.",
author = "Jhu, {Jhe Ciou} and Chang, {Ting Chang} and Chang, {Geng Wei} and Syu, {Yong En} and Tsai, {Tsung Ming} and Jian, {Fu Yen} and Chang, {Kuan Chang} and Ya-Hsiang Tai",
year = "2012",
month = nov,
day = "19",
doi = "10.1149/1.3701537",
language = "English",
isbn = "9781566779593",
series = "ECS Transactions",
number = "7",
pages = "169--178",
booktitle = "Wide-Bandgap Semiconductor Materials and Devices 13",
edition = "7",
note = "null ; Conference date: 06-05-2012 Through 10-05-2012",
}