N 2 O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors

Jhe Ciou Jhu, Ting Chang Chang*, Geng Wei Chang, Yong En Syu, Tsung Ming Tsai, Fu Yen Jian, Kuan Chang Chang, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon's dependence on the defects of a-IGZO active layer, this paper examines a device fabricated with N 2 O plasma treatment at a-IGZO film. This phenomenon only appears in the as-fabricated device, but not in the device with N 2 O plasma treatment, which is experimentally verified. N 2 O plasma treatment of a-IGZO TFTs enhance the thin film bonding strength, which could suppress the formation of temperature-dependent point defects. The point defects could be generated from oxygen atoms leaving their original sites above 400K. The N 2 O plasma treatment devices have better stability performance than as-fabricated devices. The results suggested that the density of point states for a-IGZO TFTs with N 2 O plasma treatment is much lower than that as-fabricated. The N 2 O plasma repairs the point defect to suppress temperature-dependent sub-threshold leakage current.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 13
Pages169-178
Number of pages10
Edition7
DOIs
StatePublished - 19 Nov 2012
Event13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number7
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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