N+ -doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal

M. C. Wang*, T. C. Chang, Po-Tsun Liu, R. W. Xiao, L. F. Lin, Y. Y. Li, F. S. Yeh, J. R. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The feasibility of using CuMg as source/drain metal electrodes for n+ -doped-layer-free microcrystalline silicon thin film transistors (μ-Si:H TFTs) has been investigated. The Ohmic-contact characteristic has been achieved by using the CuMg alloy as source/drain metal. Furthermore, a wet etching process of Cu alloy source/drain metal has been completed by using the ferric chloride base etchant. The proposed μ-Si:H TFT has shown similar electrical characteristic with the μ-Si:H TFT with n+ -doped layer. The experimental result also showed that the CuMg alloy was suitable for the replacement of n+ -doped layer in thin film transistor liquid-crystal displays.

Original languageEnglish
Article number022113
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
StatePublished - 1 Aug 2007

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