N-Channel Zinc Oxide Nanowire:Perylene Diimide Blend Organic Thin Film Transistors

Shin Pin Chen, Yan Sheng Chen, Chien-Wen Hsieh*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

N-channel solution-processed organic thin film transistors (TFTs) based on a blend network of N,N'-bis(1H,1H-perfluorobutyl)-1,7-dicyanoperylene-3,4:9,10-tetracarboxylic diimide (PDiF-CN2) and zinc oxide (ZnO) nanowires show remarkable electron field effect mobilities of up to 0.5 cm2/$\text{V}\cdot \text{s}$ in ambient air, which is about five-fold higher than those based on pristine PDiF-CN2 films. When tested in both bias directions the output and transfer electrical hysteresis of those blend TFTs are negligible. In addition, their low processing temperature and flexible semiconducting layer makes them a highly promising means of realizing high performance, solution-processed n-channel organic TFTs.

Original languageEnglish
Article number7938302
Pages (from-to)367-371
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume5
Issue number5
DOIs
StatePublished - 1 Sep 2017

Keywords

  • Organic thin film transistors
  • n-channel
  • solution process
  • zinc oxide nanowire:perylene diimide blend

Fingerprint Dive into the research topics of 'N-Channel Zinc Oxide Nanowire:Perylene Diimide Blend Organic Thin Film Transistors'. Together they form a unique fingerprint.

Cite this