N-channel versus p-channel flash EEPROM-which one has better reliabilities

Steve S. Chung, S. T. Liaw, C. M. Yih, Z. H. Ho, C. J. Lin, D. S. Kuo, M. S. Liang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, hot-carrier reliability issues such as disturbs and endurance in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using a DINOR structure. These results can be used as a guideline for designers. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These properties meet scaling trends to make this cell a promising candidate for future flash memory applications.

Original languageEnglish
Title of host publication2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages67-72
Number of pages6
ISBN (Electronic)0780365879
DOIs
StatePublished - 1 Jan 2001
Event39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States
Duration: 30 Apr 20013 May 2001

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2001-January
ISSN (Print)1541-7026

Conference

Conference39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
CountryUnited States
CityOrlando
Period30/04/013/05/01

Keywords

  • Application software
  • CMOS technology
  • Channel hot electron injection
  • Current measurement
  • Flash memory
  • Guidelines
  • Hot carriers
  • Nonvolatile memory
  • Reliability engineering
  • Tunneling

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    Chung, S. S., Liaw, S. T., Yih, C. M., Ho, Z. H., Lin, C. J., Kuo, D. S., & Liang, M. S. (2001). N-channel versus p-channel flash EEPROM-which one has better reliabilities. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual (pp. 67-72). [922884] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2001-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2001.922884