N-channel versus P-channel flas EEPROM-which one has better reliabilities

Steve S. Chung; S. T. Liaw; C. M. Yih; Z. H. Ho; C. J. Lin; D. S. Kuo; M. S. Liang

N-channel versus P-channel flas EEPROM-which one has better reliabilities

Steve S. Chung, S. T. Liaw, C. M. Yih, Z. H. Ho, C. J. Lin, D. S. Kuo, M. S. Liang

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, the hot-carrier reliability issues such as disturbs, endurance, in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using DINOR structure. These results can be used as a guideline for designers to choose. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These meet the scaling trend such that it is a promising candidate for future flash memory applications.

Original language	English
Pages (from-to)	67-72
Number of pages	6
Journal	Annual Proceedings - Reliability Physics (Symposium)
State	Published - 1 Jan 2001
Event	39th Annual International Reliability Physics Symposium - Orlando, FL, United States Duration: 30 Apr 2001 → 3 May 2001

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title = "N-channel versus P-channel flas EEPROM-which one has better reliabilities",

abstract = "In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, the hot-carrier reliability issues such as disturbs, endurance, in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using DINOR structure. These results can be used as a guideline for designers to choose. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These meet the scaling trend such that it is a promising candidate for future flash memory applications.",

author = "Chung, {Steve S.} and Liaw, {S. T.} and Yih, {C. M.} and Ho, {Z. H.} and Lin, {C. J.} and Kuo, {D. S.} and Liang, {M. S.}",

year = "2001",

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language = "English",

pages = "67--72",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

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TY - JOUR

T1 - N-channel versus P-channel flas EEPROM-which one has better reliabilities

AU - Chung, Steve S.

AU - Liaw, S. T.

AU - Yih, C. M.

AU - Ho, Z. H.

AU - Lin, C. J.

AU - Kuo, D. S.

AU - Liang, M. S.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, the hot-carrier reliability issues such as disturbs, endurance, in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using DINOR structure. These results can be used as a guideline for designers to choose. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These meet the scaling trend such that it is a promising candidate for future flash memory applications.

AB - In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, the hot-carrier reliability issues such as disturbs, endurance, in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using DINOR structure. These results can be used as a guideline for designers to choose. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These meet the scaling trend such that it is a promising candidate for future flash memory applications.

UR - http://www.scopus.com/inward/record.url?scp=0034995212&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034995212

SP - 67

EP - 72

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

Y2 - 30 April 2001 through 3 May 2001

ER -