N-channel versus P-channel flas EEPROM-which one has better reliabilities

Steve S. Chung, S. T. Liaw, C. M. Yih, Z. H. Ho, C. J. Lin, D. S. Kuo, M. S. Liang

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, the hot-carrier reliability issues such as disturbs, endurance, in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using DINOR structure. These results can be used as a guideline for designers to choose. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These meet the scaling trend such that it is a promising candidate for future flash memory applications.

Original languageEnglish
Pages (from-to)67-72
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 1 Jan 2001
Event39th Annual International Reliability Physics Symposium - Orlando, FL, United States
Duration: 30 Apr 20013 May 2001

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