In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, the hot-carrier reliability issues such as disturbs, endurance, in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using DINOR structure. These results can be used as a guideline for designers to choose. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These meet the scaling trend such that it is a promising candidate for future flash memory applications.
|Number of pages||6|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - 1 Jan 2001|
|Event||39th Annual International Reliability Physics Symposium - Orlando, FL, United States|
Duration: 30 Apr 2001 → 3 May 2001