Multiphoton ionization of monosilane

Qing Zheng Lu, Chuan Fan Ding, Pei Qian Diao, Fan Ao Kong*, Hiroyuki Matsui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The (3 + 1) photon ionization spectra of SiH4 have been measured. A basically continuous spectrum was recorded in laser wavelengths from 428 to 458 nm. Two vibrational progressions were found in the UV laser region of 347-392 nm, and a fine structure of the band at 363.5 nm was assigned. The fragment ions were detected by a time-of-flight mass spectrometer. No parent ion SiH4 + was observed whereas SiH2 + and SiH3 + were the major products. The ratio of SiH2 + SiH3 + was approximately equal to that of single photon ionization at the same energy, but the fraction of Si+ was increased. Some additional bands appeared in Si+ spectrum in the range of 384-390 nm implicating that the increased Si+ might be generated from SiH2 + and SiH+ ions.

Original languageEnglish
Pages (from-to)178-186
Number of pages9
JournalScience in China (Scientia Sinica) Series B
Volume36
Issue number2
DOIs
StatePublished - 1 Feb 1993

Keywords

  • laser photoionization
  • mass detection
  • monosilane
  • multiphoton processes

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