Multilevel resistive switching memory with amorphous InGaZnO-based thin film

Ching Hui Hsu, Yang Shun Fan, Po-Tsun Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study.

Original languageEnglish
Article number062905
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume102
Issue number6
DOIs
StatePublished - 11 Feb 2013

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