Multilayer bottom antireflective coatings for high numerical aperture and modified illumination exposure systems

Hsuen Li Chen*, Wonder Fan, Tzyy Jiann Wang, Fu-Hsiang Ko, Chung I. Hsieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

To achieve increasing resolution of optical lithography, exposure systems with a high numerical aperture (NA) are essential. The efficiency of the conventional single-layer bottom antireflective coating (BARC) structure will degrade as the incidence angle increases. This is because the reflectance at the resist/substrate interface increases in the large incident-angle regime. Here we demonstrate a multilayer BARC structure for high-NA and modified illumination exposure systems in ArF and F2 lithographies. The multilayer antireflective structure is composed of conventional silicon oxynitride films. By adding an optimized structure, the reflectance can be maintained below 1% at a resist/high reflective substrate interface for the incident angles from 0 to 53 des (i.e. numerical aperture ∼0.8). The swing effect, in the resist is also shown to be significantly reduced.

Original languageEnglish
Pages (from-to)3737-3742
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 B
DOIs
StatePublished - 1 Jun 2003

Keywords

  • ArF and F lithography
  • Bottom antireflective coatings
  • High numerical aperture
  • Modified illumination
  • Multilayer

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