Multilayer bottom antireflective coatings for high numerical aperture and modified illumination exposure systems

H. L. Chen, W. Fan, T. J. Wang, Fu-Hsiang Ko, C. I. Hsieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the recent ITRS roadmap, ArF and F 2 excimer laser lithographies combining with resolution enhancement techniques would lead IC technologies to generations of 90 nm and 65 nm, respectively. For increasing resolution of optical lithography, expose systems with high numerical aperture (NA) are essential. The efficiency of the conventional single-layer BARC structure will degrade as the incident angle increased. It is due to the reflectance at resist/BARC interface increases in the large incident-angle regime. Here we demonstrate a multilayer bottom antireflective coating (BARC) layer for high-NA exposure systems in ArF and F 2 lithographies.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages62-63
Number of pages2
ISBN (Electronic)4891140313, 9784891140311
DOIs
StatePublished - 1 Jan 2002
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: 6 Nov 20028 Nov 2002

Publication series

Name2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period6/11/028/11/02

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    Chen, H. L., Fan, W., Wang, T. J., Ko, F-H., & Hsieh, C. I. (2002). Multilayer bottom antireflective coatings for high numerical aperture and modified illumination exposure systems. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 62-63). [1178544] (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178544