Multi-peak negative differential resistance arising from tunneling current through few germanium quantum dots

W. T. Lai, G. H. Chen, David M.T. Kuo, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-oxide-silicon (MOS) capacitors incorporating 2 ∼ 3 germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated to exhibit multi-peak negative differential resistance (NDR) for multiple-value memories and logics. The tunneling current through the Ge-QD MOS capacitors is theoretically and experimentally studied. We found that negative differential resistance (NDR) arises from the interdot Coulomb interactions and the QDs with shell-filling conditions. The experimental results qualitatively match with theoretical prediction.

Original languageEnglish
Title of host publicationIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs
StatePublished - 1 Dec 2008
EventIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States
Duration: 15 Jun 200816 Jun 2008

Publication series

NameIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Conference

ConferenceIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
CountryUnited States
CityHonolulu, HI
Period15/06/0816/06/08

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    Lai, W. T., Chen, G. H., Kuo, D. M. T., & Li, P-W. (2008). Multi-peak negative differential resistance arising from tunneling current through few germanium quantum dots. In IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 [5418431] (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008). https://doi.org/10.1109/SNW.2008.5418431