Multi-millijoule, high-repetition-rate Q-switched Nd-doped vanadate laser with an AlGaInAs quantum-well saturable absorber

Y. P. Huang, Y. J. Huang, P. Y. Chiang, Yung-Fu Chen, Kai-Feng Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We develop an AlGaInAs periodic quantum-well (QW) device with a large modulation strength to severs as a saturable absorber in a QCW diode-pumped Nd:YVO4 laser. The saturation transmission of the AlGaInAs QW saturable absorber was measured with a nanosecond 1064-nm Q-switched laser as the excitation source. Measured result indicates that AlGaInAs QW device has a much larger absorption cross section than that of Cr4+:YAG crystal to be an appropriate absorber for passively Q-switching Nd:YVO4 lasers. Stable Q-switched pulses with a pulse energy of 3.5 mJ and a peak power of >1 MW were generated at a pump energy of 34 mJ. The fluctuation of the output pulse energy at a repetition rate of 200 Hz was found to be less than ±2%.

Original languageEnglish
Title of host publication2010 Photonics Global Conference, PGC 2010
DOIs
StatePublished - 1 Dec 2010
Event2010 Photonics Global Conference, PGC 2010 - Orchard, Singapore
Duration: 14 Dec 201016 Dec 2010

Publication series

Name2010 Photonics Global Conference, PGC 2010

Conference

Conference2010 Photonics Global Conference, PGC 2010
CountrySingapore
CityOrchard
Period14/12/1016/12/10

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