Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

L. Zhao, H. Y. Chen, S. C. Wu, Z. Jiang, S. Yu, Tuo-Hung Hou, H. S.Philip Wong, Y. Nishi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

99 Scopus citations


Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO 2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

Original languageEnglish
Pages (from-to)5698-5702
Number of pages5
Issue number11
StatePublished - 7 Jun 2014

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