Multi-gate MOSFET compact model BSIM-MG

Darsen Lu*, Chung Hsun Lin, Ali Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

8 Scopus citations


As the scaling of conventional planar CMOS is reaching its limits, multiple-gate CMOS structures will likely take up the baton. To facilitate circuit simulation in such advanced technologies, we have developed BSIM-MG: a versatile compact model for multi-gate MOSFETs. In this chapter separate formulations for common multi-gate and independent multi-gate MOSFETs are presented. The core I-V and C-V models are derived and agree well with TCAD simulations without using fitting parameters, reflecting the predictivity and scalability of the model. Physical effects such as volume inversion, short channel effects and quantum mechanical effects are included in the model. We verify BSIM-MG against triple-gate SOI FinFET experimental data. The model fits data very well across a wide range of biases, gate lengths and temperatures. It is also computationally efficient and suitable for simulating large circuits. Finally, several multi-gate circuit simulation examples are presented to demonstrate the use of the model.

Original languageEnglish
Title of host publicationCompact Modeling
Subtitle of host publicationPrinciples, Techniques and Applications
PublisherSpringer Netherlands
Number of pages35
ISBN (Print)9789048186136
StatePublished - 1 Dec 2010

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