Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications

Shih Chieh Wu*, Hsien Tsung Feng, Ming Jiue Yu, I. Ting Wang, Tuo-Hung Hou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We reported a novel flexible nonvolatile memory using complete logic-compatible a-IGZO TFTs fabricated at room temperature. The memory device utilized localized and independent resistive switching for high-density two-bit-per-cell and multi-bit-per-cell operations. Combining low-temperature fabrication, low-cost integration, high bit-density, and excellent flexible memory characteristics, this device shows promise for future system-on-plastic applications.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages5.3.1-5.3.4
Number of pages4
DOIs
StatePublished - 10 Dec 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 10 Dec 201213 Dec 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period10/12/1213/12/12

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