MPI/MS detection of SiF and SiF2 radicals produced from the reaction of F2 and NF3 with silicon

J. A. Dagata*, D. W. Squire, C. S. Dulcey, D. S.Y. Hsu, Ming-Chang Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

SiF and SiF2 radicals, produced in the thermal reaction of F2 and NF3 with solid silicon, have been detected by multiphoton ionization mass spectrometry in the 438 and 321 nm wavelength regions, respectively. The reaction pathway to the production of SiF radicals is of minor significance compared with SiF2 production over a wide range of temperatures and pressures. In both cases it was found that little or no fragmentation of the parent ion occurs upon ionization. MPI/MS is thus shown to be a useful diagnostic tool for studies of fluorine-silicon etching reactions.

Original languageEnglish
Pages (from-to)151-155
Number of pages5
JournalChemical Physics Letters
Volume134
Issue number2
DOIs
StatePublished - 20 Feb 1987

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