Motional resistance issue of TSV-based resonator device and its improvement with a concave Cu TSV structural design

Jian Yu Shih, Yen Chi Chen, Chih Hung Chiu, Kuan-Neng Chen

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Motional resistance of TSV-based resonator devices with 3D integration techniques is investigated at the operating oscillating mode. Even with well-developed TSV and device fabrication, the motional resistance issue of the TSV-based resonator device is found due to the poor connected Ag paste. The corresponding solution is demonstrated by a modified concave Cu TSVs structure. This modified concave Cu TSV design shows the excellent device characteristics and no visible gaps between the Cu TSVs and resonator devices to insure a good electrical connection.

Original languageEnglish
Article number6832492
Pages (from-to)865-867
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number8
DOIs
StatePublished - 1 Jan 2014

Keywords

  • concave through silicon via (TSV)
  • motional resistance
  • Three-dimensional (3D) integration

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