MoS2 transistors with 1-nanometer gate lengths

Sujay B. Desai, Surabhi R. Madhvapathy, Angada B. Sachid, Juan Pablo Llinas, Qingxiao Wang, Geun Ho Ahn, Gregory Pitner, Moon J. Kim, Jeffrey Bokor, Chen-Ming Hu, H. S.Philip Wong, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

619 Scopus citations

Abstract

Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ∼65 millivolts per decade and an On/Off current ratio of ∼106. Simulations show an effective channel length of ∼3.9 nm in the Off state and ∼1 nm in the On state.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalScience
Volume354
Issue number6308
DOIs
StatePublished - 7 Oct 2016

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