MOSFETs with 9 to 13 a thick gate oxides

Mahesh S. Krishnan*, Leland Chang, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

35 Scopus citations

Abstract

In this work, MOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for mobility reduction mechanism, namely Remote Charge Scattering has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.

Original languageEnglish
Pages (from-to)241-244
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 5 Dec 19998 Dec 1999

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