MOSFETs

Hiroshi Iwai*, Simon Min Sze, Yuan Taur, Hei Wong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

2 Scopus citations

Abstract

MOSFET is a kind of transistor in which the current control terminal consists of insulated gate stack. It is the most fundamental, common, and the smallest electronic device ever manufactured. The explosive advances in integrated circuits have been made possible by continuous down-scaling of this elemental device size. In order to pursue the scaling trend for next several generations, new technologies such as high-k gate insulator, metal source/drain, multiple gate structure including nanowire, and possibly III-V/Ge channel are being developed.

Original languageEnglish
Title of host publicationGuide to State-of-the-Art Electron Devices
PublisherWiley-IEEE Press
Pages21-36
Number of pages16
ISBN (Electronic)9781118517543
ISBN (Print)9781118347263
DOIs
StatePublished - 1 Jan 2013

Keywords

  • Drain
  • Electron
  • Gate
  • High-k
  • Hole
  • MOSFET
  • Nanowire
  • Scaling
  • Source
  • Substrate

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