Scaling limits of the double-gate MOSFET structure are explored. Because short-channel effects can be adequately controlled by thinning the silicon body, the eventual scaling limit will be determined by the ability to control off-state leakage due to quantum mechanical tunneling and thermionic emission between the source and drain. Depending on threshold voltage and the source/drain doping profile, this will restrict gate length scaling to 5-11 nm. As power supplies are scaled down, maintaining on-state drive current may become difficult due to threshold voltage limitations. Series resistance becomes important as the body thickness is reduced, but intrinsic device performance may still be improved.