MOSFET inversion layer capacitance model based on Fermi-Dirac statistics for wide temperature range

Kai Chen*, George Zhang, Jon Duster, Chen-Ming Hu, Jianhui Huang, Zhihong Liu, Ping K. Ko

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations
Original languageEnglish
Pages (from-to)507-509
Number of pages3
JournalSolid-State Electronics
Volume41
Issue number3
DOIs
StatePublished - 1 Jan 1997

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