MOSFET hot-carrier reliability improvement by forward-body bias

Akira Hokazono*, Sriram Balasubramanian, Kazunari Ishimaru, Hidemi Ishiuchi, Chen-Ming Hu, Tsu Jae King Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Active threshold voltage VTH control via well-substrate biasing can be utilized to satisfy International Roadmap for Semiconductors performance and standby power requirements for CMOS technology beyond the hp65-nm node. In this letter, the impact of substrate bias VSUB on hot-carrier reliability is presented. The impact varies with the gate length and body effect factor. These findings are explained, and the effects of future scaling are discussed using a quasi-two-dimensional model. Significant and important improvement in hot-carrier lifetime with forward-bias VSUB can be expected for deeply scaled CMOS devices, making it an attractive method for extending the scalability of bulk-Si transistor technology.

Original languageEnglish
Pages (from-to)605-608
Number of pages4
JournalIEEE Electron Device Letters
Volume27
Issue number7
DOIs
StatePublished - 1 Jul 2006

Keywords

  • Forward-body bias
  • Hot-carrier reliability
  • MOSFET
  • Reverse-body bias
  • Substrate bias

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    Hokazono, A., Balasubramanian, S., Ishimaru, K., Ishiuchi, H., Hu, C-M., & Liu, T. J. K. (2006). MOSFET hot-carrier reliability improvement by forward-body bias. IEEE Electron Device Letters, 27(7), 605-608. https://doi.org/10.1109/LED.2006.877306