MOSFET drain engineering for ESD performance

Y. Wei*, Y. Loh, C. Wang, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Hot carrier effect has received the most attention for the drain engineering of sub-micron MOSFET. However, ESD immunity is equally important for the I/O devices. Hot carrier robust LDD (Lightly Doped Drain) structures have been reported to be weak on ESD immunity. Therefore, an alternate drain structure for I/O buffer is necessary to meet all reliability criteria. Three types of MOSFET drain structures, LDD (Lightly Doped Drain), DDD (Double Diffused Drain) and MDD (Moderately Doped Drain), are characterized and compared for three common I/O circuit configurations. Greater than 7kV HBM ESD performance can be achieved. The MDD structure is found to be the best overall choice.

Original languageEnglish
JournalElectrical Overstress/Electrostatic Discharge Symposium Proceedings
StatePublished - 1 Dec 1992
EventElectrical Overstress/Electrostatic Discharge Symposium Proceedings - 1992 EOS/ESD - Dallas, TX, USA
Duration: 16 Sep 199218 Sep 1992

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