MOSFET Drain Breakdown Voltage

Wu Shiung Feng; T. Y. Chan; Chen-Ming Hu

doi:10.1109/EDL.1986.26432

MOSFET Drain Breakdown Voltage

Wu Shiung Feng, T. Y. Chan, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A bstract—The grounded-gate or gate-assisted drain breakdown voltage of n-channel MOSFET's has been characterized for wide ranges of oxide thickness and substrate doping concentration. Two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified. We propose that these two regimes reflect two possible locations of breakdown—at the n+ -p junction and in the deep-depletion layer in the n+ drain. They can be separated by their different breakdown voltage dependences on Vg and require different approaches to process improvement.

Original language	English
Pages (from-to)	449-450
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	7
Issue number	7
DOIs	https://doi.org/10.1109/EDL.1986.26432
State	Published - 1 Jan 1986

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AB - A bstract—The grounded-gate or gate-assisted drain breakdown voltage of n-channel MOSFET's has been characterized for wide ranges of oxide thickness and substrate doping concentration. Two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified. We propose that these two regimes reflect two possible locations of breakdown—at the n+ -p junction and in the deep-depletion layer in the n+ drain. They can be separated by their different breakdown voltage dependences on Vg and require different approaches to process improvement.

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