Abstract
A bstract—The grounded-gate or gate-assisted drain breakdown voltage of n-channel MOSFET's has been characterized for wide ranges of oxide thickness and substrate doping concentration. Two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified. We propose that these two regimes reflect two possible locations of breakdown—at the n+ -p junction and in the deep-depletion layer in the n+ drain. They can be separated by their different breakdown voltage dependences on Vg and require different approaches to process improvement.
| Original language | English |
|---|---|
| Pages (from-to) | 449-450 |
| Number of pages | 2 |
| Journal | IEEE Electron Device Letters |
| Volume | 7 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1 Jan 1986 |
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Feng, W. S., Chan, T. Y., & Hu, C-M. (1986). MOSFET Drain Breakdown Voltage. IEEE Electron Device Letters, 7(7), 449-450. https://doi.org/10.1109/EDL.1986.26432