MOSFET Drain Breakdown Voltage

Wu Shiung Feng; T. Y. Chan; Chen-Ming Hu

doi:10.1109/EDL.1986.26432

MOSFET Drain Breakdown Voltage

Wu Shiung Feng, T. Y. Chan, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A bstract—The grounded-gate or gate-assisted drain breakdown voltage of n-channel MOSFET's has been characterized for wide ranges of oxide thickness and substrate doping concentration. Two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified. We propose that these two regimes reflect two possible locations of breakdown—at the n+ -p junction and in the deep-depletion layer in the n+ drain. They can be separated by their different breakdown voltage dependences on Vg and require different approaches to process improvement.

Original language	English
Pages (from-to)	449-450
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	7
Issue number	7
DOIs	https://doi.org/10.1109/EDL.1986.26432
State	Published - 1 Jan 1986

Access to Document

10.1109/EDL.1986.26432

Fingerprint Dive into the research topics of 'MOSFET Drain Breakdown Voltage'. Together they form a unique fingerprint.

Cite this

@article{3351a541e99b42f5a75da7b601ab8e6a,

title = "MOSFET Drain Breakdown Voltage",

abstract = "A bstract—The grounded-gate or gate-assisted drain breakdown voltage of n-channel MOSFET's has been characterized for wide ranges of oxide thickness and substrate doping concentration. Two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified. We propose that these two regimes reflect two possible locations of breakdown—at the n+ -p junction and in the deep-depletion layer in the n+ drain. They can be separated by their different breakdown voltage dependences on Vg and require different approaches to process improvement.",

author = "Feng, {Wu Shiung} and Chan, {T. Y.} and Chen-Ming Hu",

year = "1986",

month = jan,

day = "1",

doi = "10.1109/EDL.1986.26432",

language = "English",

volume = "7",

pages = "449--450",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - MOSFET Drain Breakdown Voltage

AU - Feng, Wu Shiung

AU - Chan, T. Y.

AU - Hu, Chen-Ming

PY - 1986/1/1

Y1 - 1986/1/1

N2 - A bstract—The grounded-gate or gate-assisted drain breakdown voltage of n-channel MOSFET's has been characterized for wide ranges of oxide thickness and substrate doping concentration. Two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified. We propose that these two regimes reflect two possible locations of breakdown—at the n+ -p junction and in the deep-depletion layer in the n+ drain. They can be separated by their different breakdown voltage dependences on Vg and require different approaches to process improvement.

AB - A bstract—The grounded-gate or gate-assisted drain breakdown voltage of n-channel MOSFET's has been characterized for wide ranges of oxide thickness and substrate doping concentration. Two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified. We propose that these two regimes reflect two possible locations of breakdown—at the n+ -p junction and in the deep-depletion layer in the n+ drain. They can be separated by their different breakdown voltage dependences on Vg and require different approaches to process improvement.

UR - http://www.scopus.com/inward/record.url?scp=0022757159&partnerID=8YFLogxK

U2 - 10.1109/EDL.1986.26432

DO - 10.1109/EDL.1986.26432

M3 - Article

AN - SCOPUS:0022757159

VL - 7

SP - 449

EP - 450

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -

MOSFET Drain Breakdown Voltage

Abstract

Access to Document

Other files and links

Cite this