Abstract
A bstract—The grounded-gate or gate-assisted drain breakdown voltage of n-channel MOSFET's has been characterized for wide ranges of oxide thickness and substrate doping concentration. Two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified. We propose that these two regimes reflect two possible locations of breakdown—at the n+ -p junction and in the deep-depletion layer in the n+ drain. They can be separated by their different breakdown voltage dependences on Vg and require different approaches to process improvement.
Original language | English |
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Pages (from-to) | 449-450 |
Number of pages | 2 |
Journal | IEEE Electron Device Letters |
Volume | 7 |
Issue number | 7 |
DOIs | |
State | Published - 1 Jan 1986 |