MOSFET design for forward body biasing scheme

Akira Hokazono*, Sriram Balasubramanian, Kazunari Ishimaru, Hidemi Ishiuchi, Tsu Jae King Liu, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme.

Original languageEnglish
Pages (from-to)387-389
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number5
DOIs
StatePublished - 1 May 2006

Keywords

  • Body bias
  • Forward bias
  • MOSFET
  • Reverse bias
  • Substrate bias
  • Work function

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    Hokazono, A., Balasubramanian, S., Ishimaru, K., Ishiuchi, H., Liu, T. J. K., & Hu, C-M. (2006). MOSFET design for forward body biasing scheme. IEEE Electron Device Letters, 27(5), 387-389. https://doi.org/10.1109/LED.2006.873382