Abstract
Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme.
Original language | English |
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Pages (from-to) | 387-389 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 27 |
Issue number | 5 |
DOIs | |
State | Published - 1 May 2006 |
Keywords
- Body bias
- Forward bias
- MOSFET
- Reverse bias
- Substrate bias
- Work function