MOSFET design for forward body biasing scheme

Akira Hokazono; Sriram Balasubramanian; Kazunari Ishimaru; Hidemi Ishiuchi; Tsu Jae King Liu; Chen-Ming Hu

doi:10.1109/LED.2006.873382

MOSFET design for forward body biasing scheme

Akira Hokazono^*, Sriram Balasubramanian, Kazunari Ishimaru, Hidemi Ishiuchi, Tsu Jae King Liu, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme.

Original language	English
Pages (from-to)	387-389
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	5
DOIs	https://doi.org/10.1109/LED.2006.873382
State	Published - 1 May 2006

Keywords

Body bias
Forward bias
MOSFET
Reverse bias
Substrate bias
Work function

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@article{f7a92e5fe1af467781edb64d607c76a8,

title = "MOSFET design for forward body biasing scheme",

abstract = "Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme.",

keywords = "Body bias, Forward bias, MOSFET, Reverse bias, Substrate bias, Work function",

author = "Akira Hokazono and Sriram Balasubramanian and Kazunari Ishimaru and Hidemi Ishiuchi and Liu, {Tsu Jae King} and Chen-Ming Hu",

year = "2006",

month = may,

day = "1",

doi = "10.1109/LED.2006.873382",

language = "English",

volume = "27",

pages = "387--389",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - MOSFET design for forward body biasing scheme

AU - Hokazono, Akira

AU - Balasubramanian, Sriram

AU - Ishimaru, Kazunari

AU - Ishiuchi, Hidemi

AU - Liu, Tsu Jae King

AU - Hu, Chen-Ming

PY - 2006/5/1

Y1 - 2006/5/1

N2 - Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme.

AB - Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme.

KW - Body bias

KW - Forward bias

KW - MOSFET

KW - Reverse bias

KW - Substrate bias

KW - Work function

UR - http://www.scopus.com/inward/record.url?scp=33646267440&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.873382

DO - 10.1109/LED.2006.873382

M3 - Article

AN - SCOPUS:33646267440

VL - 27

SP - 387

EP - 389

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

ER -

MOSFET design for forward body biasing scheme

Abstract

Keywords

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