MOSFET design for forward body biasing scheme

Akira Hokazono; Sriram Balasubramanian; Kazunari Ishimaru; Hidemi Ishiuchi; Tsu Jae King Liu; Chen-Ming Hu

doi:10.1109/LED.2006.873382

MOSFET design for forward body biasing scheme

Akira Hokazono^*, Sriram Balasubramanian, Kazunari Ishimaru, Hidemi Ishiuchi, Tsu Jae King Liu, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article

29 Scopus citations

Abstract

Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme.

Original language	English
Pages (from-to)	387-389
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	5
DOIs	https://doi.org/10.1109/LED.2006.873382
State	Published - 1 May 2006

Keywords

Body bias
Forward bias
MOSFET
Reverse bias
Substrate bias
Work function

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Hokazono, A., Balasubramanian, S., Ishimaru, K., Ishiuchi, H., Liu, T. J. K., & Hu, C-M. (2006). MOSFET design for forward body biasing scheme. IEEE Electron Device Letters, 27(5), 387-389. https://doi.org/10.1109/LED.2006.873382

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