MOSFET DEGRADATION DUE TO STRESSING OF THIN OXIDE.

M. S. Liang*, Y. T. Yeow, C. Chang, Chen-Ming Hu, R. W. Brodersen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations
Original languageEnglish
Pages (from-to)50-53
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1982

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