MOSFET Degradation Due to Stressing of Thin Oxide

Mong Song Liang, Chi Chang, Yew Tong Yeow, Chen-Ming Hu, Robert W. Brodersen

Research output: Contribution to journalArticlepeer-review

97 Scopus citations


Oxide and interface traps in 100 A SiO2 created by Fowler Nordheim tunneling current have been investigated using capacitor C-V, I-V, and transistor I-V measurements. The net oxide trapped charge is initially positive due to hole trapping near the anode interface and, at sufficiently high fluence, it becomes negative due to the trapping of electrons with a centroid of 60 A from the injector (cathode) interface. Interface traps (Surface states) are created by tunneling electrons flowing to and from the substrate. The interfacetrap energy distribution gives a distinct peak at 0.65 eV above the vdence band edge. The positive charge trapping and interface traps generation saturate at high electron fluence, but not the electron trap generation. The generation rates for electron traps and interface traps are weak functions of tunneling current density over the range tested. The interface traps cause degradations in subthreshold current slope and surface electron mobility. The threshold-voltage shift can be either positive or negative under the combined influence of the oxide charges and the interface charges.

Original languageEnglish
Pages (from-to)1238-1244
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number9
StatePublished - 1 Jan 1984

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