Mosfet carrier mobility model based on gate oxide thickness, threshold and gate voltages

Kai Chen*, H. Clement Wann, Jon Dunster, Ping K. Ko, Chen-Ming Hu, Makoto Yoshida

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

87 Scopus citations

Abstract

The widely accepted universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field E eff = (ηQ inv + Q b )/∈ Si has been re-examined. New empirical mobility models for both electrons and holes expressed in terms of T ox , V t and V g explicitly are formulated. New empirical mobility models are confirmed with experimental data taken from devices of different technologies. It is also shown that the hole mobility of both the surface and buried channel P-MOSFETs can be unified for the first time by a single universal mobility equation, rather than two separate equations as previously thought necessary.

Original languageEnglish
Pages (from-to)1515-1518
Number of pages4
JournalSolid-State Electronics
Volume39
Issue number10
DOIs
StatePublished - 1 Jan 1996

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