MoS 2 heterojunctions by thickness modulation

Mahmut Tosun, Deyi Fu, Sujay B. Desai, Changhyun Ko, Jeong Seuk Kang, Der Hsien Lien, Mohammad Najmzadeh, Sefaattin Tongay, Junqiao Wu, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

In this work, we report lateral heterojunction formation in as-exfoliated MoS 2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS 2 junctions with important implications for exploring novel optoelectronic devices.

Original languageEnglish
Article number10990
JournalScientific reports
Volume5
DOIs
StatePublished - 30 Jun 2015

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