MOS charge pumps for low-voltage operation

Jieh-Tsorng Wu*, Kuen Long Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

323 Scopus citations

Abstract

New MOS charge pumps utilizing the charge transfer switches (CTS's) to direct charge flow and generate boosted output voltage are described. Using the internal boosted voltage to backward control the CTS of a previous stage yields charge pumps that are suitable for low-voltage operation. Applying dynamic control to the CTS's can eliminate the reverse charge sharing phenomenon and further improve the voltage pumping gain. The limitation imposed by the diode-configured output stage can be mitigated by pumping it with a clock of enhanced voltage amplitude. Using the new circuit techniques, a 1.2-V-to-3.5-V charge pump and a 2-V-to-16-V charge pump are demonstrated.

Original languageEnglish
Pages (from-to)592-597
Number of pages6
JournalIEEE Journal of Solid-State Circuits
Volume33
Issue number4
DOIs
StatePublished - 1 Apr 1998

Keywords

  • Charge pump
  • High-voltage generator
  • Voltage multiplier

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