Morphology and Bond Strength of Copper Wafer Bonding

Kuan-Neng Chen*, C. S. Tan, A. Fan, R. Reif

*Corresponding author for this work

Research output: Contribution to journalArticle

134 Scopus citations

Abstract

The morphology and bond strength of copper-bonded wafer pairs prepared under different bonding annealing temperatures and durations are presented. The interfacial morphology was examined by transmission electron microscopy while the bond strength was examined from a diesaw test. Physical mechanisms explaining the different roles of postbonding anneals at temperatures above and below 300°C are discussed. A map summarizing these results provides a useful reference on process conditions suitable for actual microelectronics fabrication and three-dimensional integrated circuits based on Cu wafer bonding.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number1
DOIs
StatePublished - 9 Feb 2004

Fingerprint Dive into the research topics of 'Morphology and Bond Strength of Copper Wafer Bonding'. Together they form a unique fingerprint.

  • Cite this