Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate

Yu Chung Chen, Bo Wen Lin, Wen Ching Hsu, Yew-Chuhg Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A wet etching process was employed to investigate the evolution of pyramids on the patterned sapphire substrate (PSS). It has been found that the PSS comprised a hexagonal pyramid covered with six facets {34̄17} when disk-shaped SiO 2 mask still remained. Three facets {11̄05} were exposed when mask was etched away. In this study, a continuous etching process was performed. It was found that another six facets {45̄130} and another three facets {11̄010} appeared on the bottom and the top of pyramid. Finally, when the etching time reached around 5 min, most of pyramids on the PSS disappeared.

Original languageEnglish
Pages (from-to)72-75
Number of pages4
JournalMaterials Letters
Volume118
DOIs
StatePublished - 1 Mar 2014

Keywords

  • Crystal structure
  • Optical materials
  • Patterned sapphire substrate
  • Properties
  • Surfaces
  • Wet etching process

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