Moore's law lives on

Leland Chang*, Yang Kyu Choi, Jakub Kedzierski, Nick Lindert, Peiqi Xuan, Jeffrey Bokor, Chen-Ming Hu, Tsu Jae King

*Corresponding author for this work

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

Ideally, a metal-oxide-semiconductor field-effect transistor (MOSFET) has high drive current and low leakage current. As the MOSFET channel length is reduced to 50 nm and below, the suppression of off-state leakage current becomes an increasingly difficult technological challenge-one that will ultimately limit the scalability of the conventional MOSFET structure. This paper reviews recent research performed at the University of California at Berkeley on advanced transistor structures that can extend the limit of device scaling to below 10 nm for future generations of MOS technology.

Original languageEnglish
Pages (from-to)35-42
Number of pages8
JournalIEEE Circuits and Devices Magazine
Volume19
Issue number1
DOIs
StatePublished - 1 Jan 2003

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