Monolithic V-band pseudomorphic-MODFET low-noise amplifiers

G. Metze*, A. Cornfeld, J. Singer, H. Carlson, Edward Yi Chang, T. Kirkendall, G. Dahrooge, J. Bass, H. L. Hung, T. Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

V-band, low noise MMICs (monolithic microwave integrated circuits) based on pseudomorphic modulation doped FETs (P-MODFETs) have been developed, and have yielded noise figures that are believed to be the lowest reported for any millimeter-wave MMIC. Single-stage low noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35 × 60 μm) exhibited minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs had minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB, and maximum gain of 10.4 dB at 59.5 GHz. Further, a cascaded four-stage amplifier (two dual-stage MMIC modules) exhibited a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 dB of maximum gain. Device processing uniformity and DC and RF reliability data are also presented.

Original languageEnglish
Pages (from-to)199-204
Number of pages6
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
DOIs
StatePublished - 1 Dec 1989
EventIEEE MTT-S International Microwave Symposium Digest 1989 - Long Beach, CA, USA
Duration: 13 Jun 198915 Jun 1989

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