Monolithic 3D chip integrated with 500ns NVM, 3ps logic circuits and SRAM

Chang Hong Shen, Jia Min Shieh, Tsung Ta Wu, Wen Hsien Huang, Chih Chao Yang, Chih Jen Wan, Chein Din Lin, Hsing Hsiang Wang, Bo Yuan Chen, Guo Wei Huang, Yu Chung Lien, Simon Wong, Chieh Wang, Yin-Chieh Lai, Chien Fu Chen, Meng Fan Chang, Chen-Ming Hu, Fu Liang Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Scopus citations

Abstract

For the first time, a sequentially processed sub-50nm monolithic 3D IC with integrated logic/NVM circuits and SRAM is demonstrated using multiple layers of ultrathin-body (UTB) MOSFET-based circuits interconnected through 300nm-thick interlayer dielectric (ILD). High-performance sub-50nm UTB MOSFETs using deposited ultra-flat and ultra-thin (20nm) epi-like Si enable across-layer and in-layer high-speed 3ps logic circuits and 1-T 500ns plasma-MONOS NVMs as well as 6T SRAMs with static noise margin (SNM) of 280 mV and reduced footprint by 25%. Closely stacked monolithic 3D circuits envision advanced high-performance, rich function, and low power intelligent mobile devices.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
DOIs
StatePublished - 1 Dec 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 9 Dec 201311 Dec 2013

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period9/12/1311/12/13

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  • Cite this

    Shen, C. H., Shieh, J. M., Wu, T. T., Huang, W. H., Yang, C. C., Wan, C. J., Lin, C. D., Wang, H. H., Chen, B. Y., Huang, G. W., Lien, Y. C., Wong, S., Wang, C., Lai, Y-C., Chen, C. F., Chang, M. F., Hu, C-M., & Yang, F. L. (2013). Monolithic 3D chip integrated with 500ns NVM, 3ps logic circuits and SRAM. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 [6724593] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724593