Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators

Ping Yi Hsieh, Yi Jui Chang, Pin Jun Chen, Chun Liang Chen, Chih Chao Yang*, Po-Tsang Huang, Yi Jing Chen, Chih Ming Shen, Yu Wei Liu, Chien Chi Huang, Ming Chi Tai, Wei Chung Lo, Chang Hong Shen, Jia Min Shieh, Da Chiang Chang, Kuan-Neng Chen, Wen Kuan Yeh, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Monolithic 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 μm2), whose location, size and shape are determined by design. Details of the improved location-controlled-grain (LCG) technique are presented. A voltage regulator implemented with the BEOL switch arrays using external control signals shows better theoretical figure of merit (FOM) of 0.089ns than 2D voltage regulators of 0.43ns.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781728140315
DOIs
StatePublished - Dec 2019
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 7 Dec 201911 Dec 2019

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period7/12/1911/12/19

Fingerprint Dive into the research topics of 'Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators'. Together they form a unique fingerprint.

Cite this