A modified RF nMOS model is presented for high-frequency circuit design. The high-frequency nMOS model is based on SPICE LEVEL 3 model, by adding parasitic passive components to describe the microwave behaviors. This hybrid RF model can well predict the MOSFET behaviors up to 10 GHz under various biasing conditions. A spiral inductor model is also presented. The inductance at 2.4 GHz is 2.4 nH, with a quality factor of 4. Based on these models, we designed a 180° active-balanced circuit. The 180° balanced circuits consist of a MOSFET (0.6 μm gate length and 200 μm gate width), and input/output matching networks. The unbalanced phase was about 180° at 1 to approximately 2.5 GHz frequency band, and the insertion loss was about 6 dB. The magnitude difference between two output ports is less than 0.7 dB.
|Number of pages||4|
|State||Published - 1 Dec 1999|
|Event||1999 Asia Pacific Microwave Conference (APMC'99) 'Microwaves Enter the 21st Century' - Singapore, Singapore|
Duration: 30 Nov 1999 → 3 Dec 1999
|Conference||1999 Asia Pacific Microwave Conference (APMC'99) 'Microwaves Enter the 21st Century'|
|Period||30/11/99 → 3/12/99|