Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection

Yung Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan Kai Chang, Wei Ting Hsu, Jing Kai Huang, Chang Lung Hsu, Ming Hui Chiu, Taishi Takenobu, Henan Li, Chih I. Wu, Wen-Hao Chang, Andrew Thye Shen Wee, Lain Jong Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

352 Scopus citations

Abstract

Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.

Original languageEnglish
Pages (from-to)8582-8590
Number of pages9
JournalACS Nano
Volume8
Issue number8
DOIs
StatePublished - 26 Aug 2014

Keywords

  • photoresponse
  • transition metal dichalcogenides
  • two-dimensional materials
  • MoSe2
  • MoS2

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